Get High-Speed Photodiodes in Standard CMOS Technology (The PDF
By Sasa Radovanovic, Anne-Johan Annema, Bram Nauta
ISBN-10: 0387285911
ISBN-13: 9780387285917
ISBN-10: 038728592X
ISBN-13: 9780387285924
High-speed Photodiodes in typical CMOS Technology describes high-speed photodiodes in average CMOS know-how which enable monolithic integration of optical receivers for short-haul communique. for brief haul conversation the price point is necessary , and consequently it truly is fascinating that the optical receiver might be built-in within the related CMOS expertise because the remainder of the procedure. If this can be attainable then finally a singe-chip method together with optical inputs turns into possible, putting off EMC and crosstalk difficulties, whereas information expense may be tremendous high.
The challenge of photodiodes in regular CMOS expertise it that they have got very restricted bandwidth, permitting facts premiums as much as basically 50Mbit in step with moment. High-speed Photodiodes in regular CMOS Technology first analyzes the photodiode behaviour and compares latest recommendations to reinforce the rate. After this, the publication introduces a brand new and powerful digital equalizer strategy that makes info premiums of 3Gb/s attainable, with out altering the producing know-how. the applying of this method are available in brief haul fibre verbal exchange, optical published circuit forums, but additionally photodiodes for laser disks.
Read or Download High-Speed Photodiodes in Standard CMOS Technology (The International Series in Engineering and Computer Science) PDF
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Extra resources for High-Speed Photodiodes in Standard CMOS Technology (The International Series in Engineering and Computer Science)
Sample text
For fair comparison of various photodiodes, the following assumptions are taken: • fingered photodiodes are considered in general, to have nwell/n+ stripes with different sizes. The nwell/n+ regions are placed at minimal distance defined by the technology3 . In this manner, the junction area is maximized for fixed width stripes. • the active (light sensitive) area of all diodes is identical. The active area corresponds to the illuminated silicon area. Therefore, the absorbed input optical power is the same, as well as the maximal possible responsivity for all structures.
The nwell/n+ regions are placed at minimal distance defined by the technology3 . In this manner, the junction area is maximized for fixed width stripes. • the active (light sensitive) area of all diodes is identical. The active area corresponds to the illuminated silicon area. Therefore, the absorbed input optical power is the same, as well as the maximal possible responsivity for all structures. As a result, the photodiodes performance is compared using their intrinsic bandwidth. • all junctions in photodiodes are step-junctions • the diode parameters such as doping concentrations, carrier lifetime etc.
Li, and J. C. , vol. Dec. 1999, pp. 1035 1039. BIBLIOGRAPHY 31 [21] M. Ghioni, F. Zappa, V. P. Warnock: “VLSI-compatible high speed silicon photodetector for optical datalink applications”, IEEE Trans. Electron. Devices, vol. 43, July 1996, pp. 1054 1060. CHAPTER 3 CMOS photodiodes for λ = 850 nm This chapter presents frequency and time domain analyses of photodiode structures designed in standard CMOS technology, for λ = 850 nm. 18 µm CMOS1 . The photodiodes are first analyzed as stand-alone detectors.
High-Speed Photodiodes in Standard CMOS Technology (The International Series in Engineering and Computer Science) by Sasa Radovanovic, Anne-Johan Annema, Bram Nauta
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